AN IN0.52AL0.48AS/N+-IN0.53GA0.47AS MISFET WITH A HEAVILY DOPED CHANNEL

被引：19
作者：
DELALAMO, JA
MIZUTANI, T
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 11期
关键词：
D O I：
10.1109/EDL.1987.26719
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：534 / 536
页数：3
相关论文
共 17 条
  • [1] LOW RESISTANCE ALLOYED OHMIC CONTACTS TO AL0.48IN0.52AS/N+-GA0.47IN0.53AS
    CAPANI, PM
    MUKHERJEE, SD
    ZWICKNAGL, P
    BERRY, JD
    GRIEM, HT
    RATHBUN, L
    EASTMAN, LF
    [J]. ELECTRONICS LETTERS, 1984, 20 (11) : 446 - 447
  • [2] Dambkes H., 1983, International Electron Devices Meeting 1983. Technical Digest, P621
  • [3] HATA S, 1986, 12TH EUR C OPT COMM
  • [4] A HIGH-CURRENT DRIVABILITY I-ALGAAS/N-GAAS DOPED-CHANNEL MIS-LIKE FET (DMT)
    HIDA, H
    OKAMOTO, A
    TOYOSHIMA, H
    OHATA, K
    [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 625 - 626
  • [5] HIGH-TRANSCONDUCTANCE ALLNAS/GAINAS HIFETS GROWN BY MOCVD
    KAMADA, M
    KOBAYASHI, T
    ISHIKAWA, H
    MORI, Y
    KANEKO, K
    KOJIMA, C
    [J]. ELECTRONICS LETTERS, 1987, 23 (06) : 297 - 298
  • [6] CHARACTERIZATION OF INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS
    KETTERSON, AA
    MASSELINK, WT
    GEDYMIN, JS
    KLEM, J
    PENG, CK
    KOPP, WF
    MORKOC, H
    GLEASON, KR
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 564 - 571
  • [7] MISHRA UK, 1987, DEVICE RES C SANTA B
  • [8] A NEW LOW-NOISE ALGAAS/GAAS 2DEG FET WITH A SURFACE UNDOPED LAYER - COMMENTS
    NGUYEN, LD
    TASKER, PJ
    SCHAFF, WJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (05) : 1187 - 1187
  • [9] OHNO H, 1981, I PHYS C SER, V56, P465
  • [10] MICROWAVE CHARACTERIZATION OF 1-MU-M-GATE AL0.48IN0.52AS/GA0.47IN0.53AS/INP MODFETS
    PALMATEER, LF
    TASKER, PJ
    ITOH, T
    BROWN, AS
    WICKS, GW
    EASTMAN, LF
    [J]. ELECTRONICS LETTERS, 1987, 23 (01) : 53 - 55
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