AN IN0.52AL0.48AS/N+-IN0.53GA0.47AS MISFET WITH A HEAVILY DOPED CHANNEL

被引：19

作者：

DELALAMO, JA

MIZUTANI, T

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 11期

关键词：

D O I：

10.1109/EDL.1987.26719

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：534 / 536

页数：3

共 17 条

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[2]

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[3]

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ELECTRONICS LETTERS, 1987, 23 (06) :297-298

[6] CHARACTERIZATION OF INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

KETTERSON, AA ;

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[7]

MISHRA UK, 1987, DEVICE RES C SANTA B

[8] A NEW LOW-NOISE ALGAAS/GAAS 2DEG FET WITH A SURFACE UNDOPED LAYER - COMMENTS [J].

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[9]

OHNO H, 1981, I PHYS C SER, V56, P465

[10] MICROWAVE CHARACTERIZATION OF 1-MU-M-GATE AL0.48IN0.52AS/GA0.47IN0.53AS/INP MODFETS [J].

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TASKER, PJ ;

ITOH, T ;

BROWN, AS ;

WICKS, GW ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1987, 23 (01) :53-55

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