STUDY OF N- AND P-TYPE SILICON EXPOSED TO HIGHLY ENERGETIC RADIATION

被引：2
作者：
WIKNER, EG
HORIYE, H
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1966年 / NS13卷 / 06期
关键词：
D O I：
10.1109/TNS.1996.4324341
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：18 / +
页数：1
相关论文
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[3]   SPIN RESONANCE IN ELECTRON IRRADIATED SILICON [J].
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[4]   TEMPERATURE-DEPENDENT DEFECT PRODUCTION IN BOMBARDMENT OF SEMICONDUCTORS [J].
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