REACTIVE ION ETCHING LAG INVESTIGATION OF OXIDE ETCHING IN FLUOROCARBON ELECTRON-CYCLOTRON-RESONANCE PLASMAS

Recent selective oxide etching results obtained with an electron cyclotron resonance high-density plasma reactor are presented. Reactive ion etching lag results of patterned SiO2 Samples etched with various fluorocarbon gases are discussed. A reactive ion etching lag mechanism which is based on die dependence of the oxide etch rate on rf power is proposed.