VALENCE-BOND THEORY OF OFF-CENTER IMPURITIES IN SILICON - SUBSTITUTIONAL NITROGEN

被引：34
作者：
SCHULTZ, PA
MESSMER, RP
机构：
[1] UNIV PENN,RES STRUCT MATTER LAB,PHILADELPHIA,PA 19104
[2] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301
来源：
PHYSICAL REVIEW B | 1986年 / 34卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.34.2532
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2532 / 2553
页数：22
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