SINGLE-QUANTUM-WELL STRAINED-LAYER INGAAS-INGAASP LASERS FOR THE WAVELENGTH RANGE FROM 1.43 TO 1.55-MU-M

被引：4
|
作者：
LIOU, KY
DENTAI, AG
BURROWS, EC
JOYNER, CH
BURRUS, CA
RAYBON, G
机构：
[1] AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 04期
关键词：
D O I：
10.1109/68.82096
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have fabricated strained-layer single-quantum-well InGaAs-InGaAsP lasers using a novel self-aligned-contact ridge guide structure. The lasers operate with length and mirror reflectivities were chosen to achieve laser oscillation in the wavelength range from 1.43 to 1.55-mu-m. We show that a fiber amplifier pump laser at 1.47-mu-m wavelength and a transmission source laser at 1.55-mu-m wavelength can be fabricated from a single wafer grown by metal-organic vapor phase epitaxy.
引用
收藏
页码：311 / 313
页数：3
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