ELECTRONIC-PROPERTIES AND CHEMICAL INTERACTIONS AT III-V COMPOUND SEMICONDUCTOR SURFACES - GERMANIUM AND OXYGEN ON GAAS(110) AND INP(110) CLEAVED SURFACES

被引：31
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作者：
MONCH, W
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来源：
APPLICATIONS OF SURFACE SCIENCE | 1985年 / 22-3卷 / MAY期
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10.1016/0378-5963(85)90204-1
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页码：705 / 723
页数：19
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