A PACKAGED 20-GHZ 1-W GAAS-MESFET WITH A NOVEL VIA-HOLE PLATED HEAT SINK STRUCTURE

被引：11

作者：

HIRACHI, Y

TAKEUCHI, Y

IGARASHI, M

KOSEMURA, K

YAMAMOTO, S

机构：

[1] FUJITSU LABS LTD,DEPT MICROWAVE & HIGH SPEED SEMICOND DEVICE ENGN,KAWASAKI,KANAGAWA 211,JAPAN

[2] FUJITSU LABS LTD,DIV DISCRETE SEMICOND DEVICES,KAWASAKI,KANAGAWA 211,JAPAN

[3] FUJITSU LABS LTD,ELECTRON BEAM & ION BEAM LITHOG LAB,KAWASAKI,KANAGAWA 211,JAPAN

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1984年 / 32卷 / 03期

关键词：

D O I：

10.1109/TMTT.1984.1132670

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：309 / 316

页数：8

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[8] BROAD-BAND INTERNAL MATCHING OF MICROWAVE-POWER GAAS MESFETS [J].

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[10]

YAMASAKI H, 1981, GALLIUM ARSENIDE REL, P431

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