2-PHOTON INTERBAND ELECTRON TRANSITIONS VIA DEEP IMPURITY LEVELS IN NARROW-GAP SEMICONDUCTORS

被引：0
作者：
OSIPOV, EB
OSIPOVA, NA
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1983年 / 17卷 / 12期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1418 / 1420
页数：3
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