COMPARATIVE-STUDY OF THE GROWTH-PROCESSES OF GAAS, ALGAAS, INGAAS, AND INALAS LATTICE MATCHED AND NONLATTICE MATCHED SEMICONDUCTORS USING HIGH-ENERGY ELECTRON-DIFFRACTION

被引：36
作者：
BERGER, PR
BHATTACHARYA, PK
SINGH, J
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 08期
关键词：
D O I：
10.1063/1.337880
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2856 / 2860
页数：5
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