S-BAND GAAS GUNN EFFECT OSCILLATORS

被引：16

作者：

QUIST, TM

FOYT, AG

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 03期

关键词：

D O I：

10.1109/PROC.1965.3697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：303 / &

共 5 条

[1] CONTINUOUS MICROWAVE OSCILLATIONS OF CURRENT IN GAAS
BRASLAU, N
GUNN, JB
STAPLES, JL
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (05) : 545 - &
[2] FOYT AG, 1964, JUL SOL DEV RES C BO
[3] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS
GUNN, JB
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &
[4] GUNN JB, 1963, JUN SOL C LAN DEV RE
[5] CW MICROWAVE OSCILLATIONS IN GAAS
HAKKI, BW
IRVIN, JC
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (01): : 80 - &