MEASUREMENT OF DEEP LEVELS IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT VOLTAGE SPECTROSCOPY

被引：41
作者：
JOHNSON, NM
机构：
来源：
APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 11期
关键词：
D O I：
10.1063/1.93822
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：981 / 983
页数：3
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