CONTACT RESISTIVITY AND ADHESION OF NI/AUGE/AG/AU OHMIC CONTACT DIRECTLY OF N-TYPE ALGAAS

被引：0
作者：
EHARA, T [1 ]
SHIBATA, N [1 ]
OHTA, H [1 ]
NUKUI, T [1 ]
KAZUNO, T [1 ]
机构：
[1] EASTMAN KODAK JAPAN LTD,CTR RES & DEV,DEPT MAT & DEVICES,MIDORI KU,YOKOHAMA,KANAGAWA 226,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 6A期
关键词：
ALUMINUM GALLIUM ARSENIDE; OHMIC CONTACT; CONTACT RESISTIVITY; INTERNAL STRESS; WIRE BONDING;
D O I：
10.1143/JJAP.34.3051
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The direct ohmic contact to AlGaAs, Ni/AuGe/Ag/Au = 5/120/100/580 nm has been studied. Contact resistivity of 3.8 x 10(-5) Omega cm(2) is obtained after thermal treatment for 10 min at 450 degrees C. This is one order lower than that of the conventional Ni-Ge-Au system. The new metallization also indicates strong adhesion on SiNx film, does not peel off even after thermal treatment during all device processes and withstands the wire bonding process. We conclude that the metallization is useful and applicable for AlGaAs-related devices.
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页码：3051 / 3053
页数：3
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