STRAINED GAXIN1-XP/(ALGA)0.5IN0.5P HETEROSTRUCTURES AND QUANTUM-WELL LASER-DIODES

被引：104

作者：

BOUR, DP ^{[1
]}

GEELS, RS ^{[1
]}

TREAT, DW ^{[1
]}

PAOLI, TL ^{[1
]}

PONCE, F ^{[1
]}

THORNTON, RL ^{[1
]}

KRUSOR, BS ^{[1
]}

BRINGANS, RD ^{[1
]}

WELCH, DF ^{[1
]}

机构：

[1] SPECTRA DIODE LABS,SAN JOSE,CA 95134

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 02期

关键词：

D O I：

10.1109/3.283808

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The properties of (AlGa)0.5In0.5P, strained GaxIn1-xP/(AlGa)0.5In0.5P heterostructures, and single quantum well (QW) laser diodes with Al0.5In0.5P cladding layers, prepared by low pressure organometallic vapor phase epitaxy, are described. The influence of biaxial strain upon the relative positions of the valence band edges are examined by analyzing the polarized spontaneous emission. Laser diodes with wavelength 620 < lambda < 690 nm are also fabricated, using active regions of biaxially strained GaInP or AlGaInP. At longer wavelengths, threshold current densities under 200 A/cm2 and efficiencies greater than 80% result from a biaxially-compressed GaInP QW active region. Short wavelength AlGaInP laser performance is hindered by the poor electron confinement afforded by AlGaInP heterostructures. Despite the electron leakage problem, good 630-nm band performance, and extension into the 620-nm band, is achieved with strained, single QW active regions.

引用

页码：593 / 607

页数：15

共 54 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP VISIBLE LASER-DIODES OPERATING AT 0.66-0.68 MU-M AT ROOM TEMPERATURES [J].