RECOMBINATION LIFETIME IN OXYGEN-PRECIPITATED SILICON

被引：19
作者：
HWANG, JM
SCHRODER, DK
GOODMAN, AM
机构：
[1] RCA LABS,PRINCETON,NJ 08540
[2] ARIZONA STATE UNIV,CTR SOLID STATE ELECTR RES,TEMPE,AZ 85287
来源：
IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 03期
关键词：
D O I：
10.1109/EDL.1986.26334
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：172 / 174
页数：3
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