EXTREMELY LOW RESISTANCE OHMIC CONTACTS TO NORMAL-GAAS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：19
作者：
ITO, H
ISHIBASHI, T
SUGETA, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期
关键词：
D O I：
10.1143/JJAP.23.L635
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L635 / L637
页数：3
相关论文
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