SURFACE-DEFECTS IN POLISHED SILICON STUDIED BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY

被引:25
作者
JOHANSSON, S [1 ]
SCHWEITZ, JA [1 ]
LAGERLOF, KPD [1 ]
机构
[1] CASE WESTERN RESERVE UNIV,DEPT MAT SCI & ENGN,CLEVELAND,OH 44106
关键词
D O I
10.1111/j.1151-2916.1989.tb09696.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:1136 / 1139
页数:4
相关论文
共 21 条
[1]  
ANGELL JB, 1983, SCI AM APR, P1049
[2]   ANNEALING OF SCRATCHES ON NEAR (111) SILICON SLICES [J].
BADRICK, AST ;
PUTTICK, KE ;
ELDEGHAIDY, FHA .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (06) :909-&
[3]   SCRATCHES ON NEAR (111)SILICON SLICES [J].
BADRICK, AST ;
ELDEGHAIDY, F ;
PUTTICK, KE ;
SHAHID, MA .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (02) :195-&
[4]   THE PREPARATION OF CROSS-SECTION SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY [J].
BRAVMAN, JC ;
SINCLAIR, R .
JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1984, 1 (01) :53-61
[5]   SUPPRESSION OF SURFACE-TOPOGRAPHY DEVELOPMENT IN ION-MILLING OF SEMICONDUCTORS [J].
BULLELIEUWMA, CWT ;
ZALM, PC .
SURFACE AND INTERFACE ANALYSIS, 1987, 10 (04) :210-215
[6]   AMORPHIZATION AND CONDUCTIVITY OF SILICON AND GERMANIUM INDUCED BY INDENTATION [J].
CLARKE, DR ;
KROLL, MC ;
KIRCHNER, PD ;
COOK, RF ;
HOCKEY, BJ .
PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2156-2159
[7]  
ERICSSON F, IN PRESS J MATER SCI
[8]  
FAN LS, 1987, 4TH INT C SOL STAT S
[9]  
GABRIEL KJ, 1987, 4TH INT C SOL STAT S, P853
[10]  
GROSS B, 1965, NASA D2603 TECHN NOT