THE SCHOTTKY-BARRIER HEIGHT AT THE COSI2/SI(111) INTERFACE

被引:19
作者
REES, NV
MATTHAI, CC
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1988年 / 21卷 / 27期
关键词
D O I
10.1088/0022-3719/21/27/002
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:L981 / L984
页数:4
相关论文
共 16 条
[1]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[2]   TRANSITION-METAL SILICIDES - ASPECTS OF THE CHEMICAL-BOND AND TRENDS IN THE ELECTRONIC-STRUCTURE [J].
BISI, O ;
CALANDRA, C .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (35) :5479-5494
[3]   ELECTRONIC-STRUCTURE AND PROPERTIES OF NI-SI(001) AND NI-SI(111) REACTIVE INTERFACES [J].
BISI, O ;
CHIAO, LW ;
TU, KN .
PHYSICAL REVIEW B, 1984, 30 (08) :4664-4674
[4]   ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J].
CHERNS, D ;
ANSTIS, GR ;
HUTCHISON, JL ;
SPENCE, JCH .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05) :849-862
[5]   ELECTRONIC-STRUCTURE OF ALPHA-ALUMINA AND ITS DEFECT STATES [J].
CIRACI, S ;
BATRA, IP .
PHYSICAL REVIEW B, 1983, 28 (02) :982-992
[6]   STRUCTURE DETERMINATION OF THE COSI2-SI(111) INTERFACE BY X-RAY STANDING-WAVE ANALYSIS [J].
FISCHER, AEMJ ;
VLIEG, E ;
VANDERVEEN, JF ;
CLAUSNITZER, M ;
MATERLIK, G .
PHYSICAL REVIEW B, 1987, 36 (09) :4769-4773
[7]  
GIBSON JM, 1982, APPL PHYS LETT, V41, P818, DOI 10.1063/1.93699
[8]   NEW SILICIDE INTERFACE MODEL FROM STRUCTURAL ENERGY CALCULATIONS [J].
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1988, 60 (04) :313-316
[9]   SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION FOR A METAL-SEMICONDUCTOR INTERFACE [J].
LOUIE, SG ;
COHEN, ML .
PHYSICAL REVIEW LETTERS, 1975, 35 (13) :866-869
[10]  
REES NV, 1988, UNPUB