ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS

被引：175

作者：

ADLER, D

YOFFA, EJ

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[2] MIT,CTR MAT SCI,CAMBRIDGE,MA 02139

[3] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

来源：

PHYSICAL REVIEW LETTERS | 1976年 / 36卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.36.1197

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1197 / 1200

页数：4

共 15 条

[1]

Adler D., 1971, Amorphous Semiconductors

[2]

Agarwal S.C., 1973, Phys. Rev. B, V7, P685

[3] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].

ANDERSON, PW .

PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955

[4] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].

BRODSKY, MH ;

TITLE, RS .

PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&

[5] MEASUREMENTS OF FIELD EFFECT IN AMORPHOUS SWITCHING MATERIALS [J].

EGERTON, RF .

APPLIED PHYSICS LETTERS, 1971, 19 (06) :203-&

[6]

FRITZSCHE H, 1974, AMORPHOUS LIQUID SEM, pCH5

[7] ELECTRON CORRELATIONS IN NARROW ENERGY BANDS [J].

HUBBARD, J .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1963, 276 (1364) :238-+

[8] TEMPERATURE AND THICKNESS DEPENDENCE OF LOW-TEMPERATURE TRANSPORT IN AMORPHOUS SILICON THIN-FILMS - COMPARISON TO AMORPHOUS-GERMANIUM [J].

KNOTEK, ML .

SOLID STATE COMMUNICATIONS, 1975, 17 (11) :1431-1433

[9]

KNOTEK ML, 1973, PHYS REV LETT, V30, P856

[10] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].

MOTT, NF ;

DAVIS, EA ;

STREET, RA .

PHILOSOPHICAL MAGAZINE, 1975, 32 (05) :961-996

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