ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH ULTRATHIN LANGMUIR-BLODGETT MEMBRANES

被引：11

作者：

SCHONING, MJ ^{[1
]}

SAUKE, M ^{[1
]}

STEFFEN, A ^{[1
]}

MARSO, M ^{[1
]}

KORDOS, P ^{[1
]}

LUTH, H ^{[1
]}

KAUFFMANN, F ^{[1
]}

ERBACH, R ^{[1
]}

HOFFMANN, B ^{[1
]}

机构：

[1] UNIV KARLSRUHE, INST TECHNOL ELEKTROTECH, D-76187 KARLSRUHE, GERMANY

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1995年 / 27卷 / 1-3期

关键词：

ISFETS; MEMBRANES; LANGMUIR-BLODGETT MEMBRANES;

D O I：

10.1016/0925-4005(94)01611-K

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Novel ISFET devices coated with ultrathin Langmuir-Blodgett (LB) membranes are suitable for sodium detection in liquids. Successful deposition of a Na+-ion sensitive LB film onto structured ISFET surfaces has been achieved. The LB material consists of a rod-like LB polymer mixed with a commercially available sodium ionophore. A thin additional LB covering layer increases the sensor stability in contact with the electrolytes. The ISFET sensors show a nearly Nernstian sodium sensitivity of more than 52 mV/pNa in the range 10(-3) to 1 mol/l over a period of at least 30 days. A maximum response time after concentration changes of less than 1 min was determined. Selectivities were investigated to interfering ions like K+, Ca2+, Mg2+ and H+. The obtained results are in good agreement with the sensor properties of capacitive silicon/SiO2 structures coated with LB membranes of the same kind.

引用

页码：325 / 328

页数：4

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