GROWTH AND CHARACTERIZATION OF CDS EPILAYERS ON (100)GAAS BY ATOMIC LAYER EPITAXY

被引：41
作者：
TADOKORO, T
OHTA, S
ISHIGURO, T
ICHINOSE, Y
KOBAYASHI, S
YAMAMOTO, N
机构：
[1] NIPPON SEIKI CO LTD,CTR R&D,NAGAOKA 94021,JAPAN
[2] NIIGATA UNIV,FAC ENGN,NIIGATA 95021,JAPAN
[3] TOKYO INST TECHNOL,FAC SCI,MEGURO KU,TOKYO 152,JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 130卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(93)90832-H
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Monocrystalline CdS films are successfully grown on (100)GaAs at the low temperature of 340-degrees-C by atomic layer epitaxy (ALE) using a molecular beam epitaxy (MBE) system. The growth orientation of the epilayer is [100] of a zincblende structure with no twinning. The film thickness is in good agreement with the predesigned atomic layer numbers. The variation of the film thickness is uniform in the whole area of the epilayer and the surface morphology is flat and smooth. The photoluminescence spectra show dominant near-band-edge emission, suggesting a high crystallographic quality. It is indicated that the ALE-CdS epilayer is advantageous, especially for the ultrathin multilayer structure preparation.
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页码：29 / 36
页数：8
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