EFFECTS OF INTERFACE BROADENING ON FAR-INFRARED AND RAMAN-SPECTRA OF GAAS/ALAS SUPERLATTICES

被引：54

作者：

SAMSON, B ^{[1
]}

DUMELOW, T ^{[1
]}

HAMILTON, AA ^{[1
]}

PARKER, TJ ^{[1
]}

SMITH, SRP ^{[1
]}

TILLEY, DR ^{[1
]}

FOXON, CT ^{[1
]}

HILTON, D ^{[1
]}

MOORE, KJ ^{[1
]}

机构：

[1] PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.46.2375

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A one-dimensional local-mode model is developed to describe phonons propagating normal to the layers of (GaAs)n1/(AlAs)n2 superlattices, in which the effects of broadening of the interfaces can be quantitatively described. The model is applied to the analysis of Raman scattering and far-infrared (FIR) measurements on short-period superlattices, n1 = n2 = 2,3,...,8, and is shown to give a good description of data in both the GaAs and AlAs optic-phonon regions using an interface width parameter W of 1.4 lattice units. The model also describes the intensities of Raman-scattering modes, FIR dielectric scattering strengths, and linewidths. The analysis demonstrates that the effects of interface broadening must be included in an accurate description of phonons in short-period superlattices, and gives a quantitative assessment of interface quality that is in agreement with x-ray measurements.

引用

页码：2375 / 2392

页数：18

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