CHANNEL MOBILITY ENHANCEMENT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：80
作者：
PANDE, KP
GUTIERREZ, D
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 04期
关键词：
D O I：
10.1063/1.95597
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：416 / 418
页数：3
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共 14 条
[1]   HIGH-POWER INP MISFETS [J].
ARMAND, M ;
BUI, DV ;
CHEVRIER, J ;
LINH, NT .
ELECTRONICS LETTERS, 1983, 19 (12) :433-434
[2]  
BERENZ J, 1984, JUN WORKSH DIEL SYST
[3]   SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].
BERGLUND, CN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+
[4]  
KINELL DK, 1984, JUN WORKSH DIEL SYST
[5]   THE EFFECT OF INTERFACIAL TRAPS ON THE STABILITY OF INSULATED GATE DEVICES ON INP [J].
LILE, DL ;
TAYLOR, MJ .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :260-267
[6]   ELECTRICAL-PROPERTIES OF AL2O3 AND A1PXOY DIELECTRIC LAYERS ON INP [J].
MEINERS, LG .
THIN SOLID FILMS, 1984, 113 (02) :85-92
[7]   LOW-POWER HIGH-SPEED INP MISFET DIRECT-COUPLED FET LOGIC [J].
MESSICK, LJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :763-766
[8]   SLOW CURRENT-DRIFT MECHANISM IN N-CHANNEL INVERSION TYPE INP-MISFET [J].
OKAMURA, M ;
KOBAYASHI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2143-2150
[9]   HIGH MOBILITY N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS BASED ON SIO2-INP INTERFACE [J].
PANDE, KP ;
NAIR, VKR .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3109-3114
[10]   PLASMA ENHANCED METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION OF ALUMINUM-OXIDE DIELECTRIC FILM FOR DEVICE APPLICATIONS [J].
PANDE, KP ;
NAIR, VKR ;
GUTIERREZ, D .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5436-5440
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