SUBSTRATE ORIENTATION AND PROCESSING EFFECTS ON GAAS/SI MISORIENTATION IN GAAS-ON-SI GROWN BY MBE

被引：54
作者：
MATYI, RJ
LEE, JW
SCHAAKE, HF
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 01期
关键词：
D O I：
10.1007/BF02652239
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：87 / 93
页数：7
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