VIBRATIONAL AND ELECTRONIC-STRUCTURE OF HYDROGEN-RELATED DEFECTS IN SILICON CALCULATED BY EXTENDED HUCKEL THEORY

被引：123

作者：

SINGH, VA ^{[1
]}

WEIGEL, C ^{[1
]}

CORBETT, JW ^{[1
]}

ROTH, LM ^{[1
]}

机构：

[1] SUNY ALBANY,INST STUDY DEFECTS SOLIDS,DEPT PHYS,ALBANY,NY 12222

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1977年 / 81卷 / 02期

关键词：

D O I：

10.1002/pssb.2220810227

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：637 / 646

页数：10

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