INFLUENCE OF DEFORMATION ON PROPERTIES OF SILICON P-N JUNCTIONS

被引：0

作者：

POLYAKOV.AL

SHKLOVSK.VV

机构：

来源：

SOVIET PHYSICS SOLID STATE,USSR | 1966年 / 8卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：163 / +

页数：1

共 50 条

[1] EFFECT OF DISLOCATIONS ON PROPERTIES OF P-N JUNCTIONS IN SILICON
PANTELEEV, VA
LAINER, LV
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1969, (05): : 145 - +
[2] ON THE DELINEATION OF P-N JUNCTIONS IN SILICON
ILES, PA
COPPEN, PJ
JOURNAL OF APPLIED PHYSICS, 1958, 29 (10) : 1514 - 1514
[3] MULTIPLICATION IN SILICON P-N JUNCTIONS
MOLL, JL
PHYSICAL REVIEW, 1965, 137 (3A): : A938 - &
[4] p-n junctions in silicon nanowires
Goncher, G.
Solanki, R.
Carruthers, J. R.
Conley, J., Jr.
Ono, Y.
JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (07) : 1509 - 1512
[5] p-n junctions in silicon nanowires
G. Goncher
R. Solanki
J. R. Carruthers
J. Conley
Y. Ono
Journal of Electronic Materials, 2006, 35 : 1509 - 1512
[6] ELECTRICAL PROPERTIES OF ALLOYED P-N JUNCTIONS IN SILICON CARBIDE
KHARLAMOVA, TE
KHOLUYANOV, GF
SOVIET PHYSICS-SOLID STATE, 1960, 2 (03): : 397 - 402
[7] ELECTRICAL PROPERTIES OF COPPER SEGREGATES IN SILICON P-N JUNCTIONS
LAWRENCE, JE
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (08) : 796 - &
[8] PHOTOELECTRIC PROPERTIES OF ALLOY P-N JUNCTIONS IN SILICON CARBIDE
KHOLUYANOV, GF
SOVIET PHYSICS-SOLID STATE, 1961, 2 (08): : 1722 - 1726
[9] THERMAL BREAKDOWN IN SILICON P-N JUNCTIONS
TAUC, J
ABRAHAM, A
PHYSICAL REVIEW, 1957, 108 (04): : 936 - 937
[10] THE ELECTRICAL PROPERTIES OF SILICON P-N JUNCTIONS GROWN FROM THE MELT
MCAFEE, KB
PEARSON, GL
PHYSICAL REVIEW, 1952, 87 (01): : 190 - 190