MINORITY-CARRIER ACCUMULATION AT HIGH-LOW JUNCTIONS

被引：8
作者：
HOUT, SRI
机构：
[1] Delft University of Technology, Electrical Engineering Department, Electronic Instrumentation Laboratory, 2600 GA Delft
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 08期
关键词：
D O I：
10.1016/0038-1101(93)90193-T
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The semiconductor transport equations have been solved for lifetime semiconductors under the assumption of quasineutrality which is calculated to be valid up to relatively high current densities. The effective diffusion length of minority carriers is shown to be (strongly) current dependent. Of the four nonequilibrium processes, minority carrier accumulation is treated analytically in greater detail, showing current dependent resistance decreases which are confirmed by both numerical solutions of the transport equations and experiments.
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页码：1135 / 1142
页数：8
相关论文
共 12 条
[1]   CARRIER EXTRACTION IN GERMANIUM [J].
ARTHUR, JB ;
BARDSLEY, W ;
BROWN, MACS ;
GIBSON, AF .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (01) :43-50
[2]   DEVICE MODELING [J].
ENGL, WL ;
DIRKS, HK ;
MEINERZHAGEN, B .
PROCEEDINGS OF THE IEEE, 1983, 71 (01) :10-33
[3]   CARRIER CONCENTRATION DISTURBANCES IN SEMICONDUCTORS [J].
LOW, GGE .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (05) :310-314
[4]   MINORITY-CARRIER INJECTION INTO SEMICONDUCTORS [J].
MANIFACIER, JC ;
HENISCH, HK .
PHYSICAL REVIEW B, 1978, 17 (06) :2640-2647
[5]   MINORITY-CARRIER EXCLUSION [J].
MANIFACIER, JC ;
HENISCH, HK .
SOLID-STATE ELECTRONICS, 1979, 22 (03) :279-281
[6]   CURRENT-CONTROLLED NONEQUILIBRIUM PROCESSES IN SEMICONDUCTORS [J].
MANIFACIER, JC ;
MOREAU, Y ;
HENISCH, HK .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :357-361
[7]  
Raabe G., 1982, NTG-Fachberichte, V79, P248
[8]   MINORITY-CARRIER EXTRACTION AND ACCUMULATION NEAR METAL-SEMICONDUCTOR INTERFACES [J].
RAHIMI, S ;
MANIFACIER, JC ;
HENISCH, HK .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6723-6728
[9]   MINORITY-CARRIER INJECTION AND EXTRACTION IN NEUTRON BOMBARDED GERMANIUM [J].
RIEDER, G ;
MANIFACIER, JC ;
HENISCH, HK .
SOLID-STATE ELECTRONICS, 1982, 25 (02) :133-136
[10]   MINORITY-CARRIER INJECTION AND EXTRACTION IN N-TYPE GERMANIUM [J].
RIEDER, G ;
HENISCH, HK ;
RAHIMI, S ;
MANIFACIER, JC .
PHYSICAL REVIEW B, 1980, 21 (02) :723-729
12