共 50 条
- [1] Electronic states in nitride semiconductor quantum dots: A tight-binding approach PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 1675 - 1678
- [4] Microscopic tight-binding description for electronic and optical properties of InN/GaN quantum dots PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11, 2006, 3 (11): : 3827 - +
- [5] Tight-binding model for the electronic and optical properties of nitride-based quantum dots PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (08): : 1853 - 1866
- [7] Tight-binding approach to electronic and optical properties of strained SiGe quantum wells NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-BASIC TOPICS IN PHYSICS, 2006, 121 (08): : 799 - 810
- [8] Strain effects on the electronic and optical properties of InAs/GaAs quantum dots: Tight-binding study PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2005, 772 : 745 - 746
- [10] Modelling of semiconductor nanostructured devices within the tight-binding approach J Phys Condens Matter, 31 (6035-6043):