ACCURATE BARRIER MODELING OF METAL AND SILICIDE CONTACTS

被引：12
作者：
SHENAI, K
SANGIORGI, E
SARASWAT, KC
SWANSON, RM
DUTTON, RW
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 05期
关键词：
D O I：
10.1109/EDL.1984.25864
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：145 / 147
页数：3
相关论文
共 50 条
[21]   Accurate barrier modeling in the presence of atmospheric effects [J].
Muradali, A ;
Fyfe, KR .
APPLIED ACOUSTICS, 1999, 56 (03) :157-182
[22]   Schottky barrier MOSFET structure with silicide source/drain on buried metal [J].
Li Ding-Yu ;
Sun Lei ;
Zhang Sheng-Dong ;
Wang Yi ;
Liu Xiao-Yan ;
Han Ru-Qi .
CHINESE PHYSICS, 2007, 16 (01) :240-244
[23]   Effect of gamma-radiation on electrophysical properties of metal silicide-silicon contacts [J].
Ilchenko, VV ;
Lisnyak, PG ;
Strikha, VI ;
Khryzhanovskii, DI .
RADIOTEKHNIKA I ELEKTRONIKA, 1996, 41 (07) :886-889
[24]   TUNGSTEN SILICIDE SCHOTTKY CONTACTS ON GAAS [J].
ZHU, Z ;
CHEUNG, NW ;
LEMNIOS, ZJ ;
STRATHMAN, MD ;
STIMMELL, JB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06) :1398-1403
[25]   Silicide formation in contacts to Si nanowires [J].
N. S. Dellas ;
C. J. Schuh ;
S. E. Mohney .
Journal of Materials Science, 2012, 47 :6189-6205
[26]   THIN PALLADIUM SILICIDE CONTACTS TO SILICON [J].
KRITZINGER, S ;
TU, KN .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :305-310
[27]   Atomistic modeling of metal-nanotube contacts [J].
Kienle D. ;
Ghosh A.W. .
Journal of Computational Electronics, 2005, 4 (1-2) :97-100
[28]   Silicide formation in contacts to Si nanowires [J].
Dellas, N. S. ;
Schuh, C. J. ;
Mohney, S. E. .
JOURNAL OF MATERIALS SCIENCE, 2012, 47 (17) :6189-6205
[29]   MOLYBDENUM SILICIDE SCHOTTKY CONTACTS TO GAAS [J].
CHUANG, HF ;
LEE, CP ;
WU, SC .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1991, 2 (01) :28-33
[30]   TANTALUM SILICIDE SCHOTTKY CONTACTS TO GAAS [J].
LEE, CP ;
LIU, TH ;
LEI, TF ;
WU, SC .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (02) :642-645
12345