PHOTOLUMINESCENCE OF INGAAS/GAAS PSEUDOMORPHIC SINGLE QUANTUM WELLS - EFFECT OF EXCITATION INTENSITY

被引：14
作者：
DEVINE, RLS
MOORE, WT
机构：
[1] Natl Research Council of Canada,, Ottawa, Ont, Can, Natl Research Council of Canada, Ottawa, Ont, Can
来源：
SOLID STATE COMMUNICATIONS | 1988年 / 65卷 / 03期
关键词：
D O I：
10.1016/0038-1098(88)90881-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
20
引用
收藏
页码：177 / 179
页数：3
相关论文
共 20 条
[1]   PHOTOLUMINESCENCE KILLER CENTER IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
AKIMOTO, K ;
KAMADA, M ;
TAIRA, K ;
ARAI, M ;
WATANABE, N .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2833-2836
[2]   HIGH-EFFICIENCY CARRIER COLLECTION AND STIMULATED-EMISSION IN THIN (50 A) PSEUDOMORPHIC INXGA1-XAS QUANTUM-WELLS [J].
ANDERSON, NG ;
LO, YC ;
KOLBAS, RM .
APPLIED PHYSICS LETTERS, 1986, 49 (13) :758-760
[3]   OPTICAL CHARACTERIZATION OF PSEUDOMORPHIC INXGA1-XAS-GAAS SINGLE-QUANTUM-WELL HETEROSTRUCTURES [J].
ANDERSON, NG ;
LAIDIG, WD ;
KOLBAS, RM ;
LO, YC .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2361-2367
[4]  
BRINBERG D, 1985, PHYS REV, V31, P7788
[5]   RESONANT CARRIER CAPTURE BY SEMICONDUCTOR QUANTUM-WELLS [J].
BRUM, JA ;
BASTARD, G .
PHYSICAL REVIEW B, 1986, 33 (02) :1420-1423
[6]  
DEVINE RLS, IN PRESS J APPL PHYS
[7]   TRANSIENT OPTICAL-SPECTRA OF A DENSE EXCITON GAS IN A DIRECT-GAP SEMICONDUCTOR [J].
FEHRENBACH, GW ;
SCHAFER, W ;
TREUSCH, J ;
ULBRICH, RG .
PHYSICAL REVIEW LETTERS, 1982, 49 (17) :1281-1284
[8]   DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].
FRITZ, IJ ;
PICRAUX, ST ;
DAWSON, LR ;
DRUMMOND, TJ ;
LAIDIG, WD ;
ANDERSON, NG .
APPLIED PHYSICS LETTERS, 1985, 46 (10) :967-969
[9]   RECOMBINATION ENHANCEMENT DUE TO CARRIER LOCALIZATION IN QUANTUM WELL STRUCTURES [J].
GOBEL, EO ;
JUNG, H ;
KUHL, J ;
PLOOG, K .
PHYSICAL REVIEW LETTERS, 1983, 51 (17) :1588-1591
[10]   QUANTUM SIZE EFFECTS IN GAAS/GAASXP1-X STRAINED-LAYER SUPERLATTICES [J].
GOURLEY, PL ;
BIEFELD, RM .
APPLIED PHYSICS LETTERS, 1984, 45 (07) :749-751
12