DETERMINATION OF LOCALIZED-STATE DISTRIBUTIONS IN AMORPHOUS-SEMICONDUCTORS FROM TRANSIENT PHOTOCONDUCTIVITY

被引：34
作者：
NAITO, H
DING, J
OKUDA, M
机构：
[1] Department of Physics and Electronics, University of Osaka Prefecture, Gakuen-cho, Sakai
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 14期
关键词：
D O I：
10.1063/1.111769
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A method has been proposed for the determination of localized-state distributions in amorphous semiconductors from transient photoconductivity using Laplace transforms. The method is valid in both pre- and post-recombination regimes of transient photoconductivity. The applicability of the method is demonstrated in amorphous arsenic triselenide.
引用
收藏
页码：1830 / 1832
页数：3
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