DETERMINATION OF LOCALIZED-STATE DISTRIBUTIONS IN AMORPHOUS-SEMICONDUCTORS FROM TRANSIENT PHOTOCONDUCTIVITY

被引：34

作者：

NAITO, H

DING, J

OKUDA, M

机构：

[1] Department of Physics and Electronics, University of Osaka Prefecture, Gakuen-cho, Sakai

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 14期

关键词：

D O I：

10.1063/1.111769

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method has been proposed for the determination of localized-state distributions in amorphous semiconductors from transient photoconductivity using Laplace transforms. The method is valid in both pre- and post-recombination regimes of transient photoconductivity. The applicability of the method is demonstrated in amorphous arsenic triselenide.

引用

页码：1830 / 1832

页数：3

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