HIGH-PURITY REFRACTORY-METALS IN MICROELECTRONICS

被引：0
作者：
GLEBOVSKII, VG
DULINETS, YC
MARKARYANTS, EA
YASHCHAK, VY
机构：
来源：
SOVIET MICROELECTRONICS | 1990年 / 19卷 / 02期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The results of complex investigations which allow one to create optimal technological methods for obtaining high-purity refractory metals and sputtering targets of them are given. Analytical methods which allow one to objectively characterize metals of high purity have been developed. The physicochemical conditions for formation of metal films with electrophysical parameters satisfactory for the requirements of VLSI have been determined. The conditions for formation of silicides of the group IV, V, and VI refractory metals of the periodic system have been determined. It has been shown that the parameters of the silicide films correspond to the requirements imposed on the structures of microelectronics in resistivity and contact resistance and with respect to leakage currents.
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页码：76 / 84
页数：9
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