SELF-CONSISTENT TIGHT-BINDING INVESTIGATION OF CHEMICAL TRENDS FOR NATIVE DEFECTS IN III-V SEMICONDUCTORS

被引:11
作者
KUHN, W [1 ]
STREHLOW, R [1 ]
HANKE, M [1 ]
机构
[1] HUMBOLDT UNIV,SEKT PHYS,DDR-1040 BERLIN,GER DEM REP
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1987年 / 141卷 / 02期
关键词
D O I
10.1002/pssb.2221410222
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:541 / 557
页数:17
相关论文
共 36 条
[1]   ASGA ANTISITE DEFECT IN GAAS [J].
BACHELET, GB ;
SCHLUTER, M ;
BARAFF, GA .
PHYSICAL REVIEW B, 1983, 27 (04) :2545-2547
[2]   CALCULATION OF THE TOTAL ENERGY OF CHARGED POINT-DEFECTS USING THE GREENS-FUNCTION TECHNIQUE [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1984, 30 (04) :1853-1866
[3]   ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (12) :1327-1330
[4]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[5]  
CHUNG PJL, 1983, PHYS REV B, V27, P1101
[6]  
Clementi E., 1974, Atomic Data and Nuclear Data Tables, V14, P177, DOI 10.1016/S0092-640X(74)80016-1
[7]   STUDY OF THE IDEAL-VACANCY-INDUCED NEUTRAL DEEP LEVELS IN III-V COMPOUND SEMICONDUCTORS AND THEIR TERNARY ALLOYS [J].
DASSARMA, S ;
MADHUKAR, A .
PHYSICAL REVIEW B, 1981, 24 (04) :2051-2068
[8]  
FERENCZI G, 1983, DEFECT COMPLEXES SEM, P301
[9]   SIMPLE MODEL OF MULTIPLE CHARGE STATES OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS [J].
HALDANE, FDM ;
ANDERSON, PW .
PHYSICAL REVIEW B, 1976, 13 (06) :2553-2559
[10]   THEORY OF SUBSTITUTIONAL DEEP TRAPS IN COVALENT SEMICONDUCTORS [J].
HJALMARSON, HP ;
VOGL, P ;
WOLFORD, DJ ;
DOW, JD .
PHYSICAL REVIEW LETTERS, 1980, 44 (12) :810-813