EXTREMELY LOW-NOISE POTENTIOMETRY WITH A SCANNING TUNNELING MICROSCOPE

被引:48
作者
PELZ, JP
KOCH, RH
机构
关键词
D O I
10.1063/1.1140428
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:301 / 305
页数:5
相关论文
共 11 条
[1]   SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J].
BINNING, G ;
ROHRER, H ;
GERBER, C ;
WEIBEL, E .
PHYSICAL REVIEW LETTERS, 1982, 49 (01) :57-61
[2]   REAL-SPACE OBSERVATION OF PI-BONDED CHAINS AND SURFACE DISORDER ON SI(111)2X1 [J].
FEENSTRA, RM ;
THOMPSON, WA ;
FEIN, AP .
PHYSICAL REVIEW LETTERS, 1986, 56 (06) :608-611
[3]   SILVER FILMS CONDENSED AT 300-K AND 90-K - SCANNING TUNNELING MICROSCOPY OF THEIR SURFACE-TOPOGRAPHY [J].
GIMZEWSKI, JK ;
HUMBERT, A ;
BEDNORZ, JG ;
REIHL, B .
PHYSICAL REVIEW LETTERS, 1985, 55 (09) :951-954
[4]   SURFACE ELECTRONIC-STRUCTURE OF SI(111)-(7 X 7) RESOLVED IN REAL SPACE [J].
HAMERS, RJ ;
TROMP, RM ;
DEMUTH, JE .
PHYSICAL REVIEW LETTERS, 1986, 56 (18) :1972-1975
[5]   DIRECT MEASUREMENT OF POTENTIAL STEPS AT GRAIN-BOUNDARIES IN THE PRESENCE OF CURRENT FLOW [J].
KIRTLEY, JR ;
WASHBURN, S ;
BRADY, MJ .
PHYSICAL REVIEW LETTERS, 1988, 60 (15) :1546-1549
[6]   CHARACTERIZATION OF ELECTRON TRAPPING DEFECTS ON SILICON BY SCANNING TUNNELING MICROSCOPY [J].
KOCH, RH ;
HAMERS, RJ .
SURFACE SCIENCE, 1987, 181 (1-2) :333-339
[7]   GAAS PN JUNCTION STUDIED BY SCANNING TUNNELING POTENTIOMETRY [J].
MURALT, P .
APPLIED PHYSICS LETTERS, 1986, 49 (21) :1441-1443
[8]   SCANNING TUNNELING MICROSCOPY AND POTENTIOMETRY ON A SEMICONDUCTOR HETEROJUNCTION [J].
MURALT, P ;
MEIER, H ;
POHL, DW ;
SALEMINK, HWM .
APPLIED PHYSICS LETTERS, 1987, 50 (19) :1352-1354
[9]   SCANNING TUNNELING POTENTIOMETRY [J].
MURALT, P ;
POHL, DW .
APPLIED PHYSICS LETTERS, 1986, 48 (08) :514-516
[10]  
REIF F, 1965, FUNDAMENTALS STATIST