INTERFACE CHARGE CONTROL OF DIRECTLY BONDED SILICON STRUCTURES

被引：102

作者：

BENGTSSON, S

ENGSTROM, O

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 03期

关键词：

D O I：

10.1063/1.343469

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1231 / 1239

页数：9

共 19 条

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