DETERMINATION OF ELECTRON AND HOLE MOBILITIES IN AN A-SI-H FROM PHOTOELECTRIC EFFECTS IN A WAVE-GUIDE STRUCTURE

被引：2

作者：

ZELIKSON, M

WEISER, K

SALZMAN, J

KANICKI, J

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,HAIFA,ISRAEL

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80153-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on novel technique for determining transport parameters in a-Si:H using a waveguide structure. The technique is based on measuring the screening of an applied voltage by photocarriers within the guide. The results, which are analyzed by rate equations which balance recombination, drift and diffusion currents, yield electron and hole mobilities of 0.6 and 0.2 cm2/(V sec) respectively. The hole mobility is close to its microscopic value.

引用

页码：455 / 458

页数：4

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[2]

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[3]

CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11

[4] ELECTRONIC TRANSPORT IN BANDGAP STATES OF HYDROGENATED AMORPHOUS-SILICON [J].