CAPACITANCE OF P-N-JUNCTIONS UNDER ELECTRICAL BREAKDOWN

被引：1

作者：

NATARAJAN, K ^{[1
]}

RAMKUMAR, K ^{[1
]}

SATYAM, M ^{[1
]}

机构：

[1] INDIAN INST SCI,DEPT ELECT COMMUN ENGN,BANGALORE 560012,KARNATAKA,INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 111卷 / 02期

关键词：

D O I：

10.1002/pssa.2211110264

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K269 / K272

页数：4

共 50 条

[21] STRUCTURE AND CAPACITANCE OF DIFFUSED P-N-JUNCTIONS WITH DEEP IMPURITY CENTERS
MIKHAILOV, GB
NIKOLAEV, YN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (03): : 375 - +
[22] CAPACITANCE - FREQUENCY DISPERSION AND ELECTROLUMINESCENCE EFFICIENCY OF GAP P-N-JUNCTIONS
KRISPIN, P
MAEGE, J
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 47 (01): : 91 - 97
[23] BARRIER CAPACITANCE OF DIFFUSED P-N-JUNCTIONS IN GALLIUM-ARSENIDE
MASHNIN, SV
KHLUDKOV, SS
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1971, 16 (07): : 1171 - +
[24] INVESTIGATION OF THE INFLUENCE OF DEEP LEVELS ON MICROPLASMA BREAKDOWN OF P-N-JUNCTIONS
VYZHIGIN, YV
GRESSEROV, BN
SOBOLEV, NA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (03): : 330 - 332
[25] SEMIEMPIRICAL DETERMINATION OF AVALANCHE BREAKDOWN TEMPERATURE PARAMETERS IN P-N-JUNCTIONS
TJAPKIN, D
RAMOVIC, R
STOJANOVIC, D
BORCIC, D
SOLID-STATE ELECTRONICS, 1984, 27 (05) : 407 - 411
[26] AVALANCHE TRANSIENTS IN SHALLOW P-N-JUNCTIONS BIASED ABOVE BREAKDOWN
LACAITA, A
SPINELLI, A
LONGHI, S
APPLIED PHYSICS LETTERS, 1995, 67 (18) : 2627 - 2629
[27] CALCULATIONS OF AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT SI P-N-JUNCTIONS
HASSAN, MMS
DOMINGOS, H
INTERNATIONAL JOURNAL OF ELECTRONICS, 1990, 68 (04) : 533 - 537
[28] THERMOSTIMULATED P-N-JUNCTIONS
KAMILOV, IK
LADZHIALIEV, MM
JETP LETTERS, 1990, 52 (12) : 679 - 681
[29] TEMPERATURE-DEPENDENCE OF THE CAPACITANCE OF P-N-JUNCTIONS IN SILICON-CARBIDE
IVANOV, PA
KACHOROVSKII, VY
MOROZENKO, YV
SUVOROV, AV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (07): : 761 - 763
[30] SUBLINEARITY OF THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF ABRUPT ASYMMETRIC P-N-JUNCTIONS
KONSTANTINOV, OV
MEZRIN, OA
EGOROV, BV
LANTRATOV, VM
LVOVA, TV
TROSHKOV, SI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (09): : 977 - 982

← 1 2 3 4 5 →