CYCLOTRON RESONANCE OF ELECTRONS IN SILICON AT TEMPERATURES UP TO 200 DEGREES K

被引：75

作者：

STRADLIN.RA

ZHUKOV, VV

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1966年 / 87卷 / 555P期

关键词：

D O I：

10.1088/0370-1328/87/1/329

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：263 / &

共 30 条

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