ION-BEAM CRYSTALLOGRAPHY OF METAL SILICON INTERFACES - PD-SI(111)

被引：43
作者：
TROMP, R
VANLOENEN, EJ
IWAMI, M
SMEENK, R
SARIS, FW
机构：
来源：
THIN SOLID FILMS | 1982年 / 93卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(82)90100-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：151 / 159
页数：9
相关论文
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[1]   A MODEL ON THE MECHANISM OF ROOM-TEMPERATURE INTERFACIAL INTERMIXING REACTION IN VARIOUS METAL-SEMICONDUCTOR COUPLES - WHAT TRIGGERS THE REACTION [J].
HIRAKI, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) :2662-2665
[2]   PRESENCE OF CRITICAL AU-FILM THICKNESS FOR ROOM-TEMPERATURE INTERFACIAL REACTION BETWEEN AU(FILM) AND SI(CRYSTAL SUBSTRATE) [J].
OKUNO, K ;
ITO, T ;
IWAMI, M ;
HIRAKI, A .
SOLID STATE COMMUNICATIONS, 1980, 34 (06) :493-497
[3]   ANGLE RESOLVED DETECTION OF CHARGED-PARTICLES WITH A NOVEL TYPE TOROIDAL ELECTROSTATIC ANALYZER [J].
SMEENK, RG ;
TROMP, RM ;
KERSTEN, HH ;
BOERBOOM, AJH ;
SARIS, FW .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 195 (03) :581-586
[4]  
TROMP RM, UNPUB SURF SCI
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