TRANSPORT-PROPERTIES OF INXGA1-XAS/GAAS STRAINED QUANTUM-WELL DELTA-DOPED HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：14

作者：

HONG, WP

ZRENNER, A

KIM, OH

DEROSA, F

HARBISON, J

FLOREZ, LT

机构：

[1] Bellcore, Red Bank, NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 11期

关键词：

D O I：

10.1063/1.103508

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the transport properties of two-dimensional electron systems in strained InxGa1-xAs channels confined in a potential well formed by delta doping and GaAs barriers. The dependence of the transport parameters on the indium composition has been studied using Hall, Shubnikov-de Haas, and cyclotron resonance measurements. Experimental measurements of the effective mass have been compared with theoretical data obtained from self-consistent calculations, which take account of effects due to biaxial strain and nonparabolicity on the band structure of In xGa1-xAs.

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页码：1117 / 1119

页数：3

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