STRUCTURE OF ANODICALLY DECORATED NPN BIPOLAR-TRANSISTORS

[1] DIFFUSION PIPES IN SILICON NPN STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 304 - &

[2] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING [J]. PHILOSOPHICAL MAGAZINE, 1966, 13 (121): : 71 - &

[3] HIRSCH PB, 1965, ELECTRON MICROSCOPY

[4] KULKARNI MV, 1972, IEEE T ELECTRON DEVI, VED19, P1098

[5] INFLUENCE OF STATIONARY DISLOCATIONS AND STACKING FAULTS ON SOME TRANSISTOR PARAMETERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (04) : 273 - &

[6] SMITH PJ, 1971, 29TH A P EL MICR SOC, P148

[7] APPLICATION OF PREFERENTIAL ELECTROCHEMICAL ETCHING OF SILICON TO SEMICONDUCTOR DEVICE TECHNOLOGY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 959 - +

[1] DIFFUSION PIPES IN SILICON NPN STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 304 - &

[2] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING [J]. PHILOSOPHICAL MAGAZINE, 1966, 13 (121): : 71 - &

[3] HIRSCH PB, 1965, ELECTRON MICROSCOPY

[4] KULKARNI MV, 1972, IEEE T ELECTRON DEVI, VED19, P1098

[5] INFLUENCE OF STATIONARY DISLOCATIONS AND STACKING FAULTS ON SOME TRANSISTOR PARAMETERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (04) : 273 - &

[6] SMITH PJ, 1971, 29TH A P EL MICR SOC, P148

[7] APPLICATION OF PREFERENTIAL ELECTROCHEMICAL ETCHING OF SILICON TO SEMICONDUCTOR DEVICE TECHNOLOGY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 959 - +