ENERGY-LOSS DISTRIBUTIONS FOR 625 KEV H+ IONS CHANNELED NEAR THE (100)AXIS IN SILICON

被引：11
|
作者：
DYGO, A
BOSHART, MA
GRANT, MW
SEIBERLING, LE
机构：
[1] Department of Physics, University of Florida, Gainesville
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 93卷 / 02期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0168-583X(94)95675-8
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
An angular dependence of the energy distributions for 625 keV H+ ions transmitted through a O.57 mum thick Si(100) single crystal is studied. The angular scans have been taken through the (100) axis along the {110} plane, and through the {110} plane at an angle of 6-degrees with respect to the [100] axis. The experimental distributions have been reproduced by a Monte Carlo simulation assuming individual contributions to the energy loss due to close and distant collisions of the H ion with inner-shell as well as valence electrons. The relative contributions of core and valence electrons to the stopping have been investigated.
引用
收藏
页码：117 / 122
页数：6
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