HOLE MOBILITY IN CARBON-DOPED GAAS AND (ALGA)AS

被引:4
作者
NAKWASKI, W
机构
[1] Center for High Technology Materials, University of New Mexico, Albuquerque
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1992年 / 132卷 / 01期
关键词
D O I
10.1002/pssa.2211320136
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:K47 / K49
页数:3
相关论文
共 15 条
[1]  
ARMOUR E, 1992, UNPUB
[2]   MINORITY-CARRIER TRANSPORT IN CARBON DOPED GALLIUM-ARSENIDE [J].
COLOMB, CM ;
STOCKMAN, SA ;
VARADARAJAN, S ;
STILLMAN, GE .
APPLIED PHYSICS LETTERS, 1992, 60 (01) :65-67
[3]   HEAVY CARBON DOPING OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GAAS USING CARBON-TETRACHLORIDE [J].
CUNNINGHAM, BT ;
HAASE, MA ;
MCCOLLUM, MJ ;
BAKER, JE ;
STILLMAN, GE .
APPLIED PHYSICS LETTERS, 1989, 54 (19) :1905-1907
[5]   CARBON DOPING OF MBE GAAS AND GA0.7AL0.3AS FILMS USING A GRAPHITE FILAMENT [J].
HOKE, WE ;
LEMONIAS, PJ ;
LYMAN, PS ;
HENDRIKS, HT ;
WEIR, D ;
COLOMBO, P .
JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :269-273
[6]   CARBON DOPING IN ALGAAS FOR ALGAAS/GAAS GRADED-BASE HETEROJUNCTION BIPOLAR-TRANSISTOR BY FLOW-RATE MODULATION EPITAXY [J].
ITO, H ;
MAKIMOTO, T .
APPLIED PHYSICS LETTERS, 1991, 58 (24) :2770-2772
[7]   CARBON DOPING AND ETCHING OF MOCVD-GROWN GAAS, INP, AND RELATED TERNARIES USING CCL4 [J].
KIBBLER, AE ;
KURTZ, SR ;
OLSON, JM .
JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) :258-263
[8]   ABRUPT P-TYPE DOPING PROFILE OF CARBON ATOMIC LAYER DOPED GAAS GROWN BY FLOW-RATE MODULATION EPITAXY [J].
KOBAYASHI, N ;
MAKIMOTO, T ;
HORIKOSHI, Y .
APPLIED PHYSICS LETTERS, 1987, 50 (20) :1435-1437
[9]   METALLIC P-TYPE GAAS AND GAALAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].
KONAGAI, M ;
YAMADA, T ;
AKATSUKA, T ;
SAITO, K ;
TOKUMITSU, E ;
TAKAHASHI, K .
JOURNAL OF CRYSTAL GROWTH, 1989, 98 (1-2) :167-173
[10]   A COMPARATIVE-STUDY OF SELECTIVE CARBON DOPING IN MOCVD GAAS USING TRIMETHYLARSENIC AND ARSINE [J].
MOON, HJ ;
STOEBE, TG ;
CHADWICK, BK .
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (12) :1351-1355