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HOLE MOBILITY IN CARBON-DOPED GAAS AND (ALGA)AS
被引:4
作者
:
NAKWASKI, W
论文数:
0
引用数:
0
h-index:
0
机构:
Center for High Technology Materials, University of New Mexico, Albuquerque
NAKWASKI, W
机构
:
[1]
Center for High Technology Materials, University of New Mexico, Albuquerque
来源
:
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
|
1992年
/ 132卷
/ 01期
关键词
:
D O I
:
10.1002/pssa.2211320136
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
[No abstract available]
引用
收藏
页码:K47 / K49
页数:3
相关论文
共 15 条
[1]
ARMOUR E, 1992, UNPUB
[2]
MINORITY-CARRIER TRANSPORT IN CARBON DOPED GALLIUM-ARSENIDE
[J].
COLOMB, CM
论文数:
0
引用数:
0
h-index:
0
机构:
Center for Compound Semiconductor Microelectronics, University of Illinois, Urbana-Champaign
COLOMB, CM
;
STOCKMAN, SA
论文数:
0
引用数:
0
h-index:
0
机构:
Center for Compound Semiconductor Microelectronics, University of Illinois, Urbana-Champaign
STOCKMAN, SA
;
VARADARAJAN, S
论文数:
0
引用数:
0
h-index:
0
机构:
Center for Compound Semiconductor Microelectronics, University of Illinois, Urbana-Champaign
VARADARAJAN, S
;
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
机构:
Center for Compound Semiconductor Microelectronics, University of Illinois, Urbana-Champaign
STILLMAN, GE
.
APPLIED PHYSICS LETTERS,
1992,
60
(01)
:65
-67
[3]
HEAVY CARBON DOPING OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GAAS USING CARBON-TETRACHLORIDE
[J].
CUNNINGHAM, BT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
CUNNINGHAM, BT
;
HAASE, MA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
HAASE, MA
;
MCCOLLUM, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
MCCOLLUM, MJ
;
BAKER, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
BAKER, JE
;
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
STILLMAN, GE
.
APPLIED PHYSICS LETTERS,
1989,
54
(19)
:1905
-1907
[4]
CHARACTERIZATION AND THERMAL-INSTABILITY OF LOW-RESISTIVITY CARBON DOPED GAAS GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY
[J].
ENQUIST, P
论文数:
0
引用数:
0
h-index:
0
机构:
Research Triangle Institute
ENQUIST, P
.
JOURNAL OF APPLIED PHYSICS,
1992,
71
(02)
:704
-708
[5]
CARBON DOPING OF MBE GAAS AND GA0.7AL0.3AS FILMS USING A GRAPHITE FILAMENT
[J].
HOKE, WE
论文数:
0
引用数:
0
h-index:
0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
HOKE, WE
;
LEMONIAS, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
LEMONIAS, PJ
;
LYMAN, PS
论文数:
0
引用数:
0
h-index:
0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
LYMAN, PS
;
HENDRIKS, HT
论文数:
0
引用数:
0
h-index:
0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
HENDRIKS, HT
;
WEIR, D
论文数:
0
引用数:
0
h-index:
0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
WEIR, D
;
COLOMBO, P
论文数:
0
引用数:
0
h-index:
0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
COLOMBO, P
.
JOURNAL OF CRYSTAL GROWTH,
1991,
111
(1-4)
:269
-273
[6]
CARBON DOPING IN ALGAAS FOR ALGAAS/GAAS GRADED-BASE HETEROJUNCTION BIPOLAR-TRANSISTOR BY FLOW-RATE MODULATION EPITAXY
[J].
ITO, H
论文数:
0
引用数:
0
h-index:
0
机构:
NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya
ITO, H
;
MAKIMOTO, T
论文数:
0
引用数:
0
h-index:
0
机构:
NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya
MAKIMOTO, T
.
APPLIED PHYSICS LETTERS,
1991,
58
(24)
:2770
-2772
[7]
CARBON DOPING AND ETCHING OF MOCVD-GROWN GAAS, INP, AND RELATED TERNARIES USING CCL4
[J].
KIBBLER, AE
论文数:
0
引用数:
0
h-index:
0
机构:
Solar Energy Research Institute, Golden
KIBBLER, AE
;
KURTZ, SR
论文数:
0
引用数:
0
h-index:
0
机构:
Solar Energy Research Institute, Golden
KURTZ, SR
;
OLSON, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Solar Energy Research Institute, Golden
OLSON, JM
.
JOURNAL OF CRYSTAL GROWTH,
1991,
109
(1-4)
:258
-263
[8]
ABRUPT P-TYPE DOPING PROFILE OF CARBON ATOMIC LAYER DOPED GAAS GROWN BY FLOW-RATE MODULATION EPITAXY
[J].
KOBAYASHI, N
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, N
;
MAKIMOTO, T
论文数:
0
引用数:
0
h-index:
0
MAKIMOTO, T
;
HORIKOSHI, Y
论文数:
0
引用数:
0
h-index:
0
HORIKOSHI, Y
.
APPLIED PHYSICS LETTERS,
1987,
50
(20)
:1435
-1437
[9]
METALLIC P-TYPE GAAS AND GAALAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
[J].
KONAGAI, M
论文数:
0
引用数:
0
h-index:
0
KONAGAI, M
;
YAMADA, T
论文数:
0
引用数:
0
h-index:
0
YAMADA, T
;
AKATSUKA, T
论文数:
0
引用数:
0
h-index:
0
AKATSUKA, T
;
SAITO, K
论文数:
0
引用数:
0
h-index:
0
SAITO, K
;
TOKUMITSU, E
论文数:
0
引用数:
0
h-index:
0
TOKUMITSU, E
;
TAKAHASHI, K
论文数:
0
引用数:
0
h-index:
0
TAKAHASHI, K
.
JOURNAL OF CRYSTAL GROWTH,
1989,
98
(1-2)
:167
-173
[10]
A COMPARATIVE-STUDY OF SELECTIVE CARBON DOPING IN MOCVD GAAS USING TRIMETHYLARSENIC AND ARSINE
[J].
MOON, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
NATL SEMICOND CORP,PUYALLUP,WA 98373
NATL SEMICOND CORP,PUYALLUP,WA 98373
MOON, HJ
;
STOEBE, TG
论文数:
0
引用数:
0
h-index:
0
机构:
NATL SEMICOND CORP,PUYALLUP,WA 98373
NATL SEMICOND CORP,PUYALLUP,WA 98373
STOEBE, TG
;
CHADWICK, BK
论文数:
0
引用数:
0
h-index:
0
机构:
NATL SEMICOND CORP,PUYALLUP,WA 98373
NATL SEMICOND CORP,PUYALLUP,WA 98373
CHADWICK, BK
.
JOURNAL OF ELECTRONIC MATERIALS,
1990,
19
(12)
:1351
-1355
←
1
2
→
共 15 条
[1]
ARMOUR E, 1992, UNPUB
[2]
MINORITY-CARRIER TRANSPORT IN CARBON DOPED GALLIUM-ARSENIDE
[J].
COLOMB, CM
论文数:
0
引用数:
0
h-index:
0
机构:
Center for Compound Semiconductor Microelectronics, University of Illinois, Urbana-Champaign
COLOMB, CM
;
STOCKMAN, SA
论文数:
0
引用数:
0
h-index:
0
机构:
Center for Compound Semiconductor Microelectronics, University of Illinois, Urbana-Champaign
STOCKMAN, SA
;
VARADARAJAN, S
论文数:
0
引用数:
0
h-index:
0
机构:
Center for Compound Semiconductor Microelectronics, University of Illinois, Urbana-Champaign
VARADARAJAN, S
;
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
机构:
Center for Compound Semiconductor Microelectronics, University of Illinois, Urbana-Champaign
STILLMAN, GE
.
APPLIED PHYSICS LETTERS,
1992,
60
(01)
:65
-67
[3]
HEAVY CARBON DOPING OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GAAS USING CARBON-TETRACHLORIDE
[J].
CUNNINGHAM, BT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
CUNNINGHAM, BT
;
HAASE, MA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
HAASE, MA
;
MCCOLLUM, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
MCCOLLUM, MJ
;
BAKER, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
BAKER, JE
;
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
STILLMAN, GE
.
APPLIED PHYSICS LETTERS,
1989,
54
(19)
:1905
-1907
[4]
CHARACTERIZATION AND THERMAL-INSTABILITY OF LOW-RESISTIVITY CARBON DOPED GAAS GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY
[J].
ENQUIST, P
论文数:
0
引用数:
0
h-index:
0
机构:
Research Triangle Institute
ENQUIST, P
.
JOURNAL OF APPLIED PHYSICS,
1992,
71
(02)
:704
-708
[5]
CARBON DOPING OF MBE GAAS AND GA0.7AL0.3AS FILMS USING A GRAPHITE FILAMENT
[J].
HOKE, WE
论文数:
0
引用数:
0
h-index:
0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
HOKE, WE
;
LEMONIAS, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
LEMONIAS, PJ
;
LYMAN, PS
论文数:
0
引用数:
0
h-index:
0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
LYMAN, PS
;
HENDRIKS, HT
论文数:
0
引用数:
0
h-index:
0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
HENDRIKS, HT
;
WEIR, D
论文数:
0
引用数:
0
h-index:
0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
WEIR, D
;
COLOMBO, P
论文数:
0
引用数:
0
h-index:
0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
CHORUS CORP,EPI DIV,ST PAUL,MN 55101
COLOMBO, P
.
JOURNAL OF CRYSTAL GROWTH,
1991,
111
(1-4)
:269
-273
[6]
CARBON DOPING IN ALGAAS FOR ALGAAS/GAAS GRADED-BASE HETEROJUNCTION BIPOLAR-TRANSISTOR BY FLOW-RATE MODULATION EPITAXY
[J].
ITO, H
论文数:
0
引用数:
0
h-index:
0
机构:
NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya
ITO, H
;
MAKIMOTO, T
论文数:
0
引用数:
0
h-index:
0
机构:
NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya
MAKIMOTO, T
.
APPLIED PHYSICS LETTERS,
1991,
58
(24)
:2770
-2772
[7]
CARBON DOPING AND ETCHING OF MOCVD-GROWN GAAS, INP, AND RELATED TERNARIES USING CCL4
[J].
KIBBLER, AE
论文数:
0
引用数:
0
h-index:
0
机构:
Solar Energy Research Institute, Golden
KIBBLER, AE
;
KURTZ, SR
论文数:
0
引用数:
0
h-index:
0
机构:
Solar Energy Research Institute, Golden
KURTZ, SR
;
OLSON, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Solar Energy Research Institute, Golden
OLSON, JM
.
JOURNAL OF CRYSTAL GROWTH,
1991,
109
(1-4)
:258
-263
[8]
ABRUPT P-TYPE DOPING PROFILE OF CARBON ATOMIC LAYER DOPED GAAS GROWN BY FLOW-RATE MODULATION EPITAXY
[J].
KOBAYASHI, N
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, N
;
MAKIMOTO, T
论文数:
0
引用数:
0
h-index:
0
MAKIMOTO, T
;
HORIKOSHI, Y
论文数:
0
引用数:
0
h-index:
0
HORIKOSHI, Y
.
APPLIED PHYSICS LETTERS,
1987,
50
(20)
:1435
-1437
[9]
METALLIC P-TYPE GAAS AND GAALAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
[J].
KONAGAI, M
论文数:
0
引用数:
0
h-index:
0
KONAGAI, M
;
YAMADA, T
论文数:
0
引用数:
0
h-index:
0
YAMADA, T
;
AKATSUKA, T
论文数:
0
引用数:
0
h-index:
0
AKATSUKA, T
;
SAITO, K
论文数:
0
引用数:
0
h-index:
0
SAITO, K
;
TOKUMITSU, E
论文数:
0
引用数:
0
h-index:
0
TOKUMITSU, E
;
TAKAHASHI, K
论文数:
0
引用数:
0
h-index:
0
TAKAHASHI, K
.
JOURNAL OF CRYSTAL GROWTH,
1989,
98
(1-2)
:167
-173
[10]
A COMPARATIVE-STUDY OF SELECTIVE CARBON DOPING IN MOCVD GAAS USING TRIMETHYLARSENIC AND ARSINE
[J].
MOON, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
NATL SEMICOND CORP,PUYALLUP,WA 98373
NATL SEMICOND CORP,PUYALLUP,WA 98373
MOON, HJ
;
STOEBE, TG
论文数:
0
引用数:
0
h-index:
0
机构:
NATL SEMICOND CORP,PUYALLUP,WA 98373
NATL SEMICOND CORP,PUYALLUP,WA 98373
STOEBE, TG
;
CHADWICK, BK
论文数:
0
引用数:
0
h-index:
0
机构:
NATL SEMICOND CORP,PUYALLUP,WA 98373
NATL SEMICOND CORP,PUYALLUP,WA 98373
CHADWICK, BK
.
JOURNAL OF ELECTRONIC MATERIALS,
1990,
19
(12)
:1351
-1355
←
1
2
→