CHARACTERISTICS OF MODULATION-DOPED ALXGA1-XAL/GAAS FIELD-EFFECT TRANSISTORS - EFFECT OF DONOR-ELECTRON SEPARATION

被引：18
作者：
DRUMMOND, TJ
FISCHER, R
SU, SL
LYONS, WG
MORKOC, H
LEE, K
SHUR, MS
机构：
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
来源：
APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 03期
关键词：
D O I：
10.1063/1.93908
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：262 / 264
页数：3
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