MELTING MODEL OF PULSED LASER PROCESSING

被引:35
作者
WOOD, RF
JELLISON, GE
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D O I
10.1016/S0080-8784(08)62437-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:165 / 250
页数:86
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共 106 条
[1]   TRANSIENT TEMPERATURE PROFILES WITHIN ACTIVE REGION OF UNIFORMLY DOPED AND HIGH-LOW DOPED SCHOTTKY IMPATTS [J].
AMOSS, JW ;
ELFE, TB .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (09) :1160-1166
[2]   TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].
AUSTON, DH ;
SURKO, CM ;
VENKATESAN, TNC ;
SLUSHER, RE ;
GOLOVCHENKO, JA .
APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440
[3]   ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING [J].
BAERI, P ;
CAMPISANO, SU ;
FOTI, G ;
RIMINI, E .
APPLIED PHYSICS LETTERS, 1978, 33 (02) :137-140
[4]   MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].
BAERI, P ;
CAMPISANO, SU ;
FOTI, G ;
RIMINI, E .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797
[5]  
Baeri P., 1982, Laser annealing of semiconductors, P75
[6]   PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J].
BAERI, P ;
FOTI, G ;
POATE, JM ;
CULLIS, AG .
PHYSICAL REVIEW LETTERS, 1980, 45 (25) :2036-2039
[7]  
BAGLEY BG, 1978, LASER SOLID INTERACT, P97
[8]   A PROGRAM TO SOLVE A SOLUTE DIFFUSION PROBLEM WITH SEGREGATION AT A MOVING INTERFACE [J].
BAKKER, M ;
HOONHOUT, D .
COMPUTER PHYSICS COMMUNICATIONS, 1981, 22 (04) :439-450
[9]  
Beattie A.R., 1958, P R SOC LOND, V249, P16
[10]  
BELL AE, 1979, RCA REV, V40, P295