MELTING MODEL OF PULSED LASER PROCESSING

[1] TRANSIENT TEMPERATURE PROFILES WITHIN ACTIVE REGION OF UNIFORMLY DOPED AND HIGH-LOW DOPED SCHOTTKY IMPATTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (09) : 1160 - 1166

[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[3] ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 137 - 140

[4] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[5] Baeri P., 1982, Laser annealing of semiconductors, P75

[6] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (25) : 2036 - 2039

[7] BAGLEY BG, 1978, LASER SOLID INTERACT, P97

[8] A PROGRAM TO SOLVE A SOLUTE DIFFUSION PROBLEM WITH SEGREGATION AT A MOVING INTERFACE [J]. COMPUTER PHYSICS COMMUNICATIONS, 1981, 22 (04) : 439 - 450

[9] Beattie A.R., 1958, P R SOC LOND, V249, P16

[10] BELL AE, 1979, RCA REV, V40, P295

[1] TRANSIENT TEMPERATURE PROFILES WITHIN ACTIVE REGION OF UNIFORMLY DOPED AND HIGH-LOW DOPED SCHOTTKY IMPATTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (09) : 1160 - 1166

[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[3] ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 137 - 140

[4] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[5] Baeri P., 1982, Laser annealing of semiconductors, P75

[6] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (25) : 2036 - 2039

[7] BAGLEY BG, 1978, LASER SOLID INTERACT, P97

[8] A PROGRAM TO SOLVE A SOLUTE DIFFUSION PROBLEM WITH SEGREGATION AT A MOVING INTERFACE [J]. COMPUTER PHYSICS COMMUNICATIONS, 1981, 22 (04) : 439 - 450

[9] Beattie A.R., 1958, P R SOC LOND, V249, P16

[10] BELL AE, 1979, RCA REV, V40, P295