THE GROWTH AND PHYSICS OF HIGH MOBILITY 2-DIMENSIONAL HOLE GASES

被引：53

作者：

DAVIES, AG

FROST, JEF

RITCHIE, DA

PEACOCK, DC

NEWBURY, R

LINFIELD, EH

PEPPER, M

JONES, GAC

机构：

[1] Cavendish Laboratory, University of Cambridge, Cambridge, CB3 OHE, Madingley Road

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90993-F

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Modulation-doped p-type GaAs-Al(x)Ga1-xAs heterojunctions have been grown by molecular beam epitaxy (MBE) on the (311)A GaAs surface using silicon as the acceptor. Two-dimensional hole gases with mobilities as high as 570,000 cm2 V-1 s-1 at 50 mK have been obtained. It is shown that the sample mobility is dependent upon the direction of orientation of the fabricated Hall bar on the MBE wafer which could be due to the anisotropic nature of the Fermi surface in p-type systems. Experimental results on the fractional quantum Hall effect (FQHE) in these high mobility hole gases are also presented.

引用

页码：318 / 322

页数：5

共 13 条

[11] FRACTIONAL QUANTIZATION OF THE HALL-EFFECT [J].