SPECIFIC DISPLACEMENTS OF CARRIERS AND PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON

被引:0
|
作者
GOLIKOVA, OA [1 ]
BABAKHODZHAEV, U [1 ]
KAZANIN, MM [1 ]
MEZDROGINA, MM [1 ]
ARLAUSKAS, K [1 ]
YUSHKA, G [1 ]
机构
[1] V KAPSUKAS STATE UNIV,VILNIUS,LITHUANIA,USSR
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 07期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:751 / 753
页数:3
相关论文
共 50 条
  • [31] DRIFT MOBILITY IN HYDROGENATED AMORPHOUS-SILICON FROM PHOTOCONDUCTIVITY DECAY
    MODDEL, G
    VIKTOROVITCH, P
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (01) : 205 - 209
  • [32] LIGHT-INTENSITY DEPENDENCE OF THE PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON
    ALMERIOUH, Y
    BULLOT, J
    CORDIER, P
    GAUTHIER, M
    MAWAWA, G
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 63 (05): : 1015 - 1030
  • [33] DOPING DEPENDENCE OF THE LOW-TEMPERATURE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON
    YOON, BG
    FRITZSCHE, H
    PHILOSOPHICAL MAGAZINE LETTERS, 1991, 63 (02) : 101 - 108
  • [34] SPIN-DEPENDENT PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON GERMANIUM ALLOYS
    GRAEFF, CFO
    BRANDT, MS
    EBERHARDT, K
    CHAMBOULEYRON, I
    STUTZMANN, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 164 : 15 - 18
  • [35] INFLUENCE OF THE EXCITATION-ENERGY ON THE MECHANISM OF THE PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON
    KAZANSKII, AG
    MILICHEVICH, EP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (10): : 1137 - 1139
  • [36] DENSITY OF STATES IN THE VALENCE BAND TAIL AND PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON
    GOLIKOVA, OA
    DOMASHEVSKAYA, EP
    MEZDROGINA, MM
    SOROKINA, KL
    TEREKHOV, VA
    TROSTYANSKII, SN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (08): : 872 - 873
  • [37] PHOTOCONDUCTIVITY AND DENSITY OF STATES IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON
    GOLIKOVA, OA
    BABAKHODZHAEV, US
    DUBRO, VV
    IKRAMOV, RG
    KAZANIN, MM
    MEZDROGINA, MM
    YAFAEV, RR
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (01): : 38 - 40
  • [38] THICKNESS DEPENDENCE OF THE PHOTOCONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
    SOLOMON, I
    BRODSKY, MH
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4548 - 4549
  • [39] PHOTOINDUCED OPTICAL-ABSORPTION VERSUS PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON
    OLIVIER, M
    PEUZIN, JC
    CHENEVASPAULE, A
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 693 - 698
  • [40] PHOTOCONDUCTIVITY, TRAPPING, AND RECOMBINATION IN DISCHARGE-PRODUCED, HYDROGENATED AMORPHOUS-SILICON
    WRONSKI, CR
    DANIEL, RE
    PHYSICAL REVIEW B, 1981, 23 (02): : 794 - 804