EQUILIBRATION KINETICS IN INTERSTITIALLY DOPED A-SI-H

被引：0

|

作者：

WINER, K

STREET, RA

机构：

来源：

AMORPHOUS SILICON TECHNOLOGY - 1989 | 1989年 / 149卷

关键词：

D O I：

10.1557/PROC-149-137

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：137 / 141

页数：5

相关论文

共 50 条

[31] TRANSIENT PHOTOMODULATION STUDIES OF PHOSPHORUS DOPED A-SI-H
ZHOU, TX
TAUC, J
VARDENY, ZV
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 292 - 294
[32] HYDROGEN EXODIFFUSION EXPERIMENTS IN PHOSPHORUS DOPED A-SI-H
ZELLAMA, K
GERMAIN, P
SQUELARD, S
MAGARINO, J
BOURDON, B
SOLID STATE COMMUNICATIONS, 1983, 47 (05) : 379 - 382
[33] DEFECT DISTRIBUTION AND DEFECT KINETICS IN UNDOPED AND BORON-DOPED A-SI-H INVESTIGATED BY MODULATED PHOTOCURRENTS
SCHUMM, G
BAUER, GH
AMORPHOUS SILICON TECHNOLOGY - 1989, 1989, 149 : 327 - 332
[34] TRAPPING AND RECOMBINATION KINETICS IN A-SI-H THIN-FILMS
KONENKAMP, R
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 643 - 646
[35] CHARGE CARRIER KINETICS DURING GROWTH OF A-SI-H LAYERS
NEITZERT, HC
WERNER, A
KUNST, M
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 166 - 168
[36] PHOTOMODULATION SPECTROSCOPY OF DANGLING BONDS IN DOPED AND UNDOPED A-SI-H
VARDENY, Z
ZHOU, TX
STODDART, HA
TAUC, J
SOLID STATE COMMUNICATIONS, 1988, 65 (09) : 1049 - 1053
[37] METASTABLE STATES IN BORON-DOPED A-SI-H FILMS
KUROVA, IA
MOCHALOVA, DA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (02): : 193 - 195
[38] LOW-TEMPERATURE CRYSTALLIZATION OF DOPED A-SI-H ALLOYS
HAMASAKI, T
KURATA, H
HIROSE, M
OSAKA, Y
APPLIED PHYSICS LETTERS, 1980, 37 (12) : 1084 - 1086
[39] OSCILLATIONS OF THE PHOTOCONDUCTIVITY AND CHARACTERISTIC FEATURES OF THE RELAXATION KINETICS OF A-SI-H
BUDAGYAN, BG
AIVAZOV, AA
STANOVOV, ON
SEMICONDUCTORS, 1993, 27 (09) : 822 - 825
[40] STUDY OF ARTIFICIAL INTERFACES IN UNDOPED AND PHOSPHORUS DOPED A-SI-H
DENG, XM
FRITZSCHE, H
JOHANSON, R
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 684 - 686

← 1 2 3 4 5 →