IMPROVEMENT OF SEMICONDUCTOR DETECTOR CHARACTERISTICS DURING SUPERCURRENT PROTON IRRADIATION

被引：1

作者：

POGREBNJAK, AD

VOROBIEV, SA

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1984年 / 228卷 / 01期

关键词：

D O I：

10.1016/0168-9002(84)90019-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：118 / 119

页数：2

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[4] STUDY OF DEFECT ANNEALING BY SUPERCURRENT PROTON-BEAM IRRADIATION AND OF RADIATION DEFECT PROFILES IN GAAS BY THE POSITRON-ANNIHILATION METHOD [J].

POGREBNYAK, AD ;

LOPATIN, VS ;

ZIYAKAEV, RG ;

VOROBIEV, SA .

PHYSICS LETTERS A, 1983, 97 (08) :362-364

[5]

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