ELECTRON-DIFFRACTION STUDY OF CHEMICAL ORDERING IN GLOW-DISCHARGE A-SI1-XCX-H

被引:45
作者
MCKENZIE, DR [2 ]
SMITH, GB
LIU, ZQ
机构
[1] NEW S WALES INST TECHNOL,DEPT PHYS,BROADWAY,NSW 2007,AUSTRALIA
[2] UNIV SYDNEY,SCH PHYS,SYDNEY,NSW 2006,AUSTRALIA
来源
PHYSICAL REVIEW B | 1988年 / 37卷 / 15期
关键词
D O I
10.1103/PhysRevB.37.8875
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:8875 / 8881
页数:7
相关论文
共 9 条
[1]   PREPARATION OF HIGHLY PHOTOSENSITIVE HYDROGENATED AMORPHOUS SI-C ALLOYS FROM A GLOW-DISCHARGE PLASMA [J].
MATSUDA, A ;
YAMAOKA, T ;
WOLFF, S ;
KOYAMA, M ;
IMANISHI, Y ;
KATAOKA, H ;
MATSUURA, H ;
TANAKA, K .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) :4025-4027
[3]   BONDING IN A-SI1-XCX - H FILMS STUDIED BY ELECTRON-ENERGY LOSS NEAR EDGE STRUCTURE [J].
MCKENZIE, DR ;
BERGER, SD ;
BROWN, LM .
SOLID STATE COMMUNICATIONS, 1986, 59 (05) :325-329
[4]   UNAMBIGUOUS DETERMINATION OF OPTICAL-CONSTANTS OF ABSORBING FILMS BY REFLECTANCE AND TRANSMITTANCE MEASUREMENTS [J].
MCPHEDRAN, RC ;
BOTTEN, LC ;
MCKENZIE, DR ;
NETTERFIELD, RP .
APPLIED OPTICS, 1984, 23 (08) :1197-1205
[5]   TETRAHEDRON MODEL FOR THE DIELECTRIC FUNCTION OF AMORPHOUS SILICON-CARBON ALLOYS [J].
MUI, K ;
SMITH, FW .
PHYSICAL REVIEW B, 1987, 35 (15) :8080-8088
[6]   ANALYSIS OF CARBON CONTENT AND DISTRIBUTION IN A-SI1-XCX-H FILMS BY RESONANT SCATTERING [J].
SIE, SH ;
MCKENZIE, DR ;
SMITH, GB ;
RYAN, CG .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) :632-635
[7]   STRUCTURAL STUDY OF HYDROGENATED AMORPHOUS-SILICON CARBON ALLOYS [J].
SPROUL, A ;
MCKENZIE, DR ;
COCKAYNE, DJH .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (02) :113-131
[8]   EVIDENCE OF CHEMICAL ORDERING IN AMORPHOUS HYDROGENATED SILICON-CARBIDE [J].
TAFTO, J ;
KAMPAS, FJ .
APPLIED PHYSICS LETTERS, 1985, 46 (10) :949-951
[9]   PROPERTIES AND STRUCTURE OF ALPHA-SIC-H FOR HIGH-EFFICIENCY ALPHA-SI SOLAR-CELL [J].
TAWADA, Y ;
TSUGE, K ;
KONDO, M ;
OKAMOTO, H ;
HAMAKAWA, Y .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :5273-5281